Material properties and advantages of tungsten targets
Ultra-high melting point and high temperature resistance
Tungsten has a melting point of up to 3422°C, making it one of the metals with the highest melting point in nature. This allows it to maintain a stable structure in high-temperature environments (such as plasma sputtering in semiconductor manufacturing), preventing the tungsten target from softening or volatilizing due to heat and affecting the uniformity of the film.
Excellent electrical and thermal conductivity
Tungsten has high electron mobility and is suitable as a conductive layer material (such as chip interconnect electrodes); at the same time, high thermal conductivity can quickly dissipate the heat generated during sputtering and extend the service life of the target.
Corrosion and wear resistance
Tungsten has strong resistance to corrosive environments such as acids and alkalis, and has high hardness (Mohs hardness 7.5). It is suitable for use in sputtering environments with high ion bombardment intensity to reduce target material loss.
High purity requirements
The purity of semiconductor-grade tungsten targets usually needs to reach more than 99.95%, or even 99.999% (5N grade) to avoid impurities contaminating the deposited film and affecting device performance (such as short circuits, leakage, etc.).
Basic specification and purity parameters of tungsten target
|
Item name |
Tungsten target |
|
Size |
Customized |
|
Tolerance size |
+/-0.2mm |
|
Certificates |
ISO9001:2008, SGS, the third test report |
|
Technics |
VIM/HP |
Tungsten target related pictures


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