Tantalum target material and preparation method thereof
The basic manufacturing method is that high-purity tantalum powder is first sintered into blocks, and then passed through a high-vacuum electron beam melting furnace to obtain high-purity tantalum ingots, and then the tantalum ingots are repeatedly plastically deformed and annealed to obtain uniform grains and a certain internal texture. Tantalum target blank, the target blank is welded to the back plate and machined to the final product. In such a manufacturing method, high-purity tantalum powder needs to be sintered into blocks first, then smelted into ingots by high vacuum electron beam, and then repeatedly plastic deformed and annealed to finally obtain materials that can be used in the production of semiconductor sputtering targets. target blank.
Tantalum target specifications
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Parameters |
Typical Value |
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Composition |
Tantalum Sputtering Target Materials |
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Purity |
4N-5N-6N Please contact seller |
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Density (g/cm³) |
Please contact seller |
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resistivity(Ω·cm) |
-- |
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Dimension (mm) |
customized. |
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Application: Thin Film, Semiconductor,decoration and so on |
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