Preparation method and related properties of pure tantalum wire
There are many methods for preparing pure tantalum wire, mainly electrochemical method, magnetron sputtering method, chemical vapor deposition method, etc. These preparation methods can control important parameters such as diameter, purity and mechanical properties of tantalum wire under different process conditions. Therefore, pure tantalum wire requires certain technical support and equipment guarantee during the preparation process.
Pure tantalum wire has a variety of physical properties, including high melting point, high density, good conductivity, excellent mechanical properties, etc. Its high melting point allows pure tantalum wire to work stably for a long time in a high temperature environment, while its high density makes pure tantalum wire more durable in application. In addition, the good conductivity of pure tantalum wire makes it one of the ideal materials for electronic components, and its excellent mechanical properties also make it have important applications in aerospace and other fields.
Basic parameters of tantalum wire
|
State
|
(MPa)
|
(%)
|
| Mild,(M) | 300-750 | 10-30 |
| Semihard(Y2) | 750-1250 | 1-6 |
| Hard(Y) | >,1250 | 1-5 |
Picture display of tantalum wire products
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