ZhenAn Briefly Describe The Factors That Affect The Deposition Rate Of Target Coating?

ZhenAn briefly describe the factors that affect the deposition rate of target coating?

Magnetron sputtering is a physical vapor deposition method that can deposit a variety of materials, including metals, alloys, and ceramics, using a specially formed magnetic field applied to a diode sputtering target. The deposition rate, or film formation rate, is a key parameter for measuring the efficiency of a magnetron sputtering machine. Many factors influence the deposition rate, including the type of working gas, the working gas pressure, the temperature of the sputtering target, and the magnetic field strength. Three key factors influence the deposition rate of magnetron sputtering target coatings: sputtering voltage, current, and power.

Sputtering Voltage
The effect of sputtering voltage on film formation rate follows a pattern: the higher the voltage, the faster the sputtering rate, and this effect is gradual and gradual within the energy range required for sputtering deposition. Among the factors influencing the sputtering coefficient, the sputtering target and the sputtering current are the most important. After the gas, the discharge voltage is indeed important. Generally speaking, during normal magnetron sputtering, the higher the discharge voltage, the greater the sputtering coefficient, meaning the incident ions have higher energy. As a result, atoms from the solid target are more easily sputtered and deposited on the substrate to form a thin film.

Sputtering Current
The sputtering current of a magnetron target is proportional to the ion current at the target surface and is therefore a key factor influencing the sputtering rate. A general rule of magnetron sputtering is that the deposition rate is fastest at the optimal gas pressure (which varies depending on the target material and the sputtering project). Therefore, without compromising film quality and meeting customer requirements, the optimal gas pressure is appropriate based on sputtering yield. There are two ways to change the sputtering current: by changing the operating voltage or the operating gas pressure.

Sputtering Power The effect of sputtering power on deposition rate is similar to that of sputtering voltage. Generally speaking, increasing the sputtering power of the magnetron target can increase the film formation rate. However, this is not a universal rule. When the sputtering voltage of the magnetron target is low (for example, around 200 volts) and the sputtering current is large, although the average sputtering power is not low, the ions cannot be sputtered and cannot be deposited. The prerequisite is that the sputtering voltage applied to the magnetron target is high enough so that the energy of the working gas ions in the electric field between the cathode and the anode is sufficiently greater than the "sputtering energy threshold" of the target.